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參數(shù)資料
| 型號： | HB52F168EN |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64 MB的無緩沖SDRAM的內(nèi)存（64 MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 39/71頁 |
| 文件大小： | 906K |
| 代理商： | HB52F168EN |
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HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
39
From ROW ACTIVE state, command operation
To [DESL], [NOP] or [BST]:
These commands result in no operation.
To [READ], [READ A]:
A read operation starts. (However, an interval of t
RCD
is required.)
To [WRIT], [WRIT A]:
A write operation starts. (However, an interval of t
RCD
is required.)
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands set the SDRAM module to precharge mode. (However, an interval
of t
RAS
is required.)
From READ state, command operation
To [DESL], [NOP]:
These commands continue read operations until the burst operation is completed.
To [BST]:
This command stops a full-page burst.
To [READ], [READ A]:
Data output by the previous read command continues to be output. After CE la-
tency, the data output resulting from the next command will start.
To [WRIT], [WRIT A]:
These commands stop a burst read, and start a write cycle.
To [ACTV]:
This command makes other banks bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands stop a burst read, and the SDRAM module enters precharge mode.
From READ with AUTO-PRECHARGE state, command operation
To [DESL], [NOP]:
These commands continue read operations until the burst operation is completed, and
the SDRAM module then enters precharge mode.
To [ACTV]:
This command makes other banks bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
From WRITE state, command operation
To [DESL], [NOP]:
These commands continue write operations until the burst operation is completed.
To [BST]:
This command stops a full-page burst.
To [READ], [READ A]:
These commands stop a burst and start a read cycle.
To [WRIT], [WRIT A]:
These commands stop a burst and start the next write cycle.
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52F169EN | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| HB52F89EM | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| HB52R1289E22 | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-A6B | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-B6B | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52F168GB-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM |
| HB52F328DC-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F328DC-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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