參數(shù)資料
型號(hào): HB52F168EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無(wú)緩沖SDRAM的內(nèi)存(64 MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 49/71頁(yè)
文件大?。?/td> 906K
代理商: HB52F168EN
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
49
WRITE to WRITE Command Interval (same ROW address in same bank)
2. Same bank, different ROW address:
When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two write commands with a precharge command and a
bank-active command.
3. Different bank:
When the bank changes, the second write can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. In the case of burst write, the second
write command has priority.
WRITE to WRITE Command Interval (different bank)
Read command to Write command interval:
1. Same bank, same ROW address:
When the write command is executed at the same ROW address of
the same bank as the preceding read command, the write command can be performed after an interval of no
less than 1 clock. However, DQMB must be set High so that the output buffer becomes High-Z before data
input.
CK
Command
Din
in B3
Address
in B1
in B2
BA
ACTV
Row
Column A
WRIT
WRIT
Column B
in A0
in B0
Bank0
Active
Column =A
Write
Column =B
Write
Burst Write Mode
Burst Length = 4
Bank 0
CK
Command
Din
in B3
Address
in B1
in B2
BA
ACTV
Row 0
Row 1
ACTV
WRIT
Column A
in A0
in B0
Bank0
Active
Bank3
Active
Bank0
Write
Bank3
Write
WRIT
Column B
Burst Write Mode
Burst Length = 4
相關(guān)PDF資料
PDF描述
HB52F169EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F89EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52R1289E22 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-A6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
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