參數(shù)資料
型號: GFP60N03
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直|第60A條(丁)| TO - 220AB現(xiàn)有
文件頁數(shù): 3/5頁
文件大?。?/td> 113K
代理商: GFP60N03
0
20
40
80
0
1
2
3
4
5
Fig. 1 – Output Characteristics
I
D
V
DS
-- Drain-to-Source Voltage (V)
0
0.01
0.015
0.005
0.02
0.025
0.03
0
20
40
60
80
100
Fig. 4 – On-Resistance
vs. Drain Current
R
D
)
I
D
-- Drain Current (A)
0
10
20
40
30
50
60
1
2
3
4
5
Fig. 2 – Transfer Characteristics
I
D
60
2.5V
0.6
1.2
1.4
1.6
0.8
1
--
50
--
25
25
50
75
100
125
150
0
R
D
(
T
J
-- Junction Temperature (
°
C)
Fig. 5 – On-Resistance
vs. Junction Temperature
V
GS
= 10V
I
D
= 30A
6.0V
10V
T
J
= 125
°
C
--55
°
C
3.0V
4.0V
4.5V
3.5V
5.0V
25
°
C
V
DS
= 10V
V
GS
= 4.5V
V
GS
-- Gate-to-Source Voltage (V)
0.8
0.6
0.4
1
1.2
1.4
--
50
--
25
25
50
75
100
125
150
0
V
G
(
T
J
-- Junction Temperature (
°
C)
Fig. 3 – Threshold Voltage
vs. Temperature
I
D
= 250
μ
A
5V
V
GS
=10V
Ratings and
Characteristic Curves
(T
A
= 25
°
C unless otherwise noted)
GFP60N03
N-Channel Enhancement-Mode MOSFET
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GFP60N03\45B 功能描述:MOSFET TO-220 N-CH 30V 60A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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