- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369684 > GFU30N03 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 43A I(D) | TO-251AA PDF資料下載
參數(shù)資料
| 型號(hào)： | GFU30N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 43A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第43A條（?。﹟對(duì)251AA |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | GFU30N03 |
GFU30N03
Vishay Semiconductor
Document Number 74573
17-Dec-01
www.vishay.com
1
New Product
N-Channel Enhancement-Mode MOSFET
T
RENCH
EN
F
ET
0.094 (2.39)
0.087 (2.21)
V
DS
30V
R
DS(ON)
15
m
I
D
43A
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
and motor drives
Fast Switching for High Efficiency
Mechanical Data
Case:
JEDEC TO-251 molded plastic body
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight:
0.011oz., 0.4g
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
Continuous Drain Current
(1)
V
GS
±
20
I
D
43
A
Pulsed Drain Current
I
DM
80
Maximum Power Dissipation
T
C
= 25°C
T
C
= 100°C
P
D
44.5
17.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
(2)
R
θ
JC
2.8
°C/W
R
θ
JA
125
Note:
(1) Maximum DC current limited by the package
(2) 1-in
2
2oz. Cu PCB mounted
TO-251 (IPAK)
Dimensions in inches and (millimeters)
G
D
S
0.245 (6.22)
0.235 (5.97)
0.375 (9.53)
0.350 (8.89)
0.214 (5.43)
0.206 (5.23)
D
0.265 (6.73)
0.255 (6.48)
0.023 (0.58)
0.018 (0.46)
0.035 (0.89)
0.028 (0.71)
0.102 (2.59)
0.078 (1.98)
G
S
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.050 (1.27)
0.035 (0.89)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GFU50N03 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 65A I(D) | TO-251AA |
| GFZ10M | 1.0 Amp Glass Passivated Sintered Rectifiers |
| GFZ10A | 1.0 Amp Glass Passivated Sintered Rectifiers |
| GFZ10B | 1.0 Amp Glass Passivated Sintered Rectifiers |
| GFZ10D | 1.0 Amp Glass Passivated Sintered Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GFU50N03\45A | 功能描述:MOSFET N-Channel 30V 65A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GF-USB-8M-32 | 制造商:Mencom 功能描述: |
| GFWB3 | 制造商:Soshin Electric Co Ltd 功能描述:BAND PASS FILTER |
| GFWQ1010 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ceramic Capacitor Stacks |
| GFWQ1012 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ceramic Capacitor Stacks |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。