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參數(shù)資料
| 型號： | GFU50N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 65A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第65A條（?。﹟對251AA |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 68K |
| 代理商： | GFU50N03 |
GFU50N03
Vishay Semiconductor
Document Number 74575
17-Dec-01
www.vishay.com
1
New Product
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
Continuous Drain Current
(1)
V
GS
±
20
I
D
65
A
Pulsed Drain Current
I
DM
150
Maximum Power Dissipation
T
C
= 25°C
T
C
= 100°C
P
D
62.5
25.0
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Junction-to-Case Thermal Resistance
R
θ
JC
2.0
°C/W
Junction-to-Ambient Thermal Resistance
R
θ
JA
110
°C/W
Notes:
(1) Maximum DC current limited by the package.
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
and motor drives
Fast Switching for High Efficiency
Mechanical Data
Case:
JEDEC TO-251 molded plastic body
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight:
0.011oz., 0.4g
N-Channel Enhancement-Mode MOSFET
T
RENCH
EN
F
ET
0.094 (2.39)
0.087 (2.21)
TO-251 (IPAK)
Dimensions in inches and (millimeters)
G
D
S
0.245 (6.22)
0.235 (5.97)
0.375 (9.53)
0.350 (8.89)
0.214 (5.43)
0.206 (5.23)
D
0.265 (6.73)
0.255 (6.48)
0.023 (0.58)
0.018 (0.46)
0.035 (0.89)
0.028 (0.71)
0.102 (2.59)
0.078 (1.98)
G
S
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.050 (1.27)
0.035 (0.89)
V
DS
30V
R
DS(ON)
9
m
I
D
65A
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|---|---|
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