- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369684 > GFP65N02 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 65A I(D) | TO-220AB PDF資料下載
參數(shù)資料
| 型號： | GFP65N02 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 65A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直|第65A條（丁）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 98K |
| 代理商： | GFP65N02 |
GFP65N02
N-Channel Enhancement-Mode MOSFET
V
DS
20V
R
DS(ON)
8.5
m
I
D
65A
NewProduct
10/8/01
T
RENCH
G
EN
F
ET
TO-220AB
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Mechanical Data
Case:
JEDEC TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Torque:
10 in-lbs maximum
Weight:
2.0g
0.154 (3.91)
0.142 (3.60)
Dia.
0.560 (14.22)
0.530 (13.46)
G
D
S
1.148 (29.16)
1.118 (28.40)
0.022 (0.56)
0.014 (0.36)
0.113 (2.87)
0.102 (2.56)
0.205 (5.20)
0.190 (4.83)
*
May be notched or flat
0.360 (9.14)
0.330 (8.38)
PIN
0.415 (10.54)
Max.
0.105 (2.67)
0.095 (2.41)
D
0.155 (3.93)
0.134 (3.40)
0.635 (16.13)
0.580 (14.73)
0.410 (10.41)
0.350 (8.89)
0.160 (4.06)
0.09 (2.28)
0.037 (0.94)
0.026 (0.66)
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
0.104 (2.64)
0.094 (2.39)
*
G
D
S
Dimensions in inches
and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
C
= 25
°
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
±
20
V
Gate-Source Voltage
V
GS
Continuous Drain Current
T
J
= 150
°
C
Pulsed Drain Current
(1)
T
C
= 25
°
C
T
C
= 100
°
C
I
D
65
41
A
I
DM
150
Power Dissipation
T
J
= 150
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
A
= 25
°
C
57
23
2
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–
55 to 150
°
C
Junction-to-Case Thermal Resistance
R
θ
JC
2.2
°
C/W
Junction-to-Ambient Thermal Resistance
R
θ
JA
62.5
°
C/W
Notes:
(1) Pulse width limited by maximum junction temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GFP75N03 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB |
| GFU25N03 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-251AA |
| GFU30N03 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 43A I(D) | TO-251AA |
| GFU50N03 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 65A I(D) | TO-251AA |
| GFZ10M | 1.0 Amp Glass Passivated Sintered Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GFP6C15A | 制造商:Hubbell Premise Wiring 功能描述:Cable Assembly Power 3 POS Power to 3 POS Power 制造商:Hubbell Wiring Device-Kellems 功能描述:Cable Assembly Power 3 POS Power to 3 POS Power |
| GFP6C15M | 制造商:Hubbell Wiring Device-Kellems 功能描述:GFCI LINECORD, IND, 15A 120V, 6', MAN |
| GFP70N03 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement-Mode MOSFET |
| GFP70N03\45B | 功能描述:MOSFET TO-220 N-CH 30V 70A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GFP75N03 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。