參數(shù)資料
型號(hào): GFP75N03
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 75A條(?。﹟ TO - 220AB現(xiàn)有
文件頁數(shù): 1/5頁
文件大小: 106K
代理商: GFP75N03
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
±20
V
Gate-Source Voltage
Continuous Drain Current
(1)
V
GS
I
D
80
A
Pulsed Drain Current
I
DM
240
Maximum Power Dissipation
T
A
= 25°C
T
A
= 100°C
P
D
69.4
27.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Lead Temperature (1/8” from case for 5 sec.)
T
L
275
°C
Junction-to-Case Thermal Resistance
R
θ
JC
1.8
°C/W
Junction-to-Ambient Thermal Resistance
R
θ
JA
62.5
°C/W
Note:
(1) Maximum DC current limited by the package
GFP75N03
N-Channel Enhancement-Mode MOSFET
V
DS
30V
R
DS(ON)
6.5m
I
D
80A
NewProduct
5/1/01
Features
Advanced Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Mechanical Data
Case:
JEDEC TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3mm) from case
Mounting Torque:
10 in-lbs maximum
Weight:
2.0g
T
RENCH
G
EN
F
ET
TO-220AB
0.154 (3.91)
0.142 (3.60)
Dia.
0.560 (14.22)
0.530 (13.46)
G
D
S
1.148 (29.16)
1.118 (28.40)
0.022 (0.56)
0.014 (0.36)
0.113 (2.87)
0.102 (2.56)
0.205 (5.20)
0.190 (4.83)
*
May be notched or flat
0.360 (9.14)
0.330 (8.38)
PIN
0.415 (10.54)
Max.
0.105 (2.67)
0.095 (2.41)
D
0.155 (3.93)
0.134 (3.40)
0.635 (16.13)
0.580 (14.73)
0.410 (10.41)
0.350 (8.89)
0.160 (4.06)
0.09 (2.28)
0.037 (0.94)
0.026 (0.66)
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
0.104 (2.64)
0.094 (2.39)
*
G
D
S
Dimensions in inches
and (millimeters)
相關(guān)PDF資料
PDF描述
GFU25N03 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-251AA
GFU30N03 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 43A I(D) | TO-251AA
GFU50N03 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 65A I(D) | TO-251AA
GFZ10M 1.0 Amp Glass Passivated Sintered Rectifiers
GFZ10A 1.0 Amp Glass Passivated Sintered Rectifiers
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GFP75N03\45B 功能描述:MOSFET N-Channel 30V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
GFPIL15125A 制造商:Hubbell Wiring Device-Kellems 功能描述:15A/125V INLINE SINGLE TAP AUTO
GFPIL15125M 制造商:Hubbell Wiring Device-Kellems 功能描述:15A/125V INLINE SINGLE TAP MANUAL
GFPIL15125TRIA 制造商:Hubbell Wiring Device-Kellems 功能描述:15A/125V INLINE TRI-TAP AUTO
GFPIL15125TRIM 制造商:HUBBELL 功能描述:15A/125V INLINE TRI-TAP MANUAL 制造商:Hubbell Premise Wiring 功能描述:15A/125V INLINE TRI-TAP MANUAL 制造商:Hubbell Wiring Device-Kellems 功能描述:15A/125V INLINE TRI-TAP MANUAL