參數(shù)資料
型號: GFP60N03
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直|第60A條(?。﹟ TO - 220AB現(xiàn)有
文件頁數(shù): 2/5頁
文件大小: 113K
代理商: GFP60N03
GFP60N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
30
V
Gate Threshold Voltage
V
GS(th)
1.0
3.0
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±100
nA
Zero Gate Voltage Drain Current
On-State Drain Current
(1)
I
DSS
V
DS
= 30V, V
GS
= 0V
1
μ
A
I
D(on)
V
DS
5V, V
GS
= 10V
60
A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 10V, I
D
= 30A
9
11
m
V
GS
= 4.5V, I
D
= 25A
13
16
Forward Transconductance
(1)
g
fs
V
DS
= 10V, I
D
= 25A
40
S
Diode Forward Voltage
Dynamic
(1)
V
SD
I
S
= 25A, V
GS
= 0V
0.9
1.3
V
Total Gate Charge
Q
g
V
DS
=15V, V
GS
=5V, I
D
=50A
16
22
35
60
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
= 10V
8
nC
Gate-Drain Charge
Q
gd
I
D
= 50A
6
Turn-On Delay Time
t
d(on)
11
20
Rise Time
t
r
V
DD
= 15V, R
L
= 15
I
D
1A, V
GEN
= 10V
R
G
= 6
11
20
ns
Turn-Off Delay Time
t
d(off)
48
80
Fall Time
t
f
15
30
Input Capacitance
C
iss
V
GS
= 0V
1850
Output Capacitance
C
oss
V
DS
= 15V
315
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
145
Source-Drain Reverse Recovery Time
t
rr
I
F
= 25A, di/dt = 100A/
μ
s
160
ns
Note:
(1) Pulse test; pulse width
300
μ
s, duty cycle
2%
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
相關(guān)PDF資料
PDF描述
GFP65N02 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 65A I(D) | TO-220AB
GFP75N03 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
GFU25N03 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-251AA
GFU30N03 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 43A I(D) | TO-251AA
GFU50N03 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 65A I(D) | TO-251AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GFP60N03\45B 功能描述:MOSFET TO-220 N-CH 30V 60A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
GFP-630211-10802 制造商:Alpha 3 Manufacturing 功能描述:
GFP-630211-20802 制造商:Alpha 3 Manufacturing 功能描述:
GFP65N02 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 65A I(D) | TO-220AB
GFP6C15A 制造商:Hubbell Premise Wiring 功能描述:Cable Assembly Power 3 POS Power to 3 POS Power 制造商:Hubbell Wiring Device-Kellems 功能描述:Cable Assembly Power 3 POS Power to 3 POS Power