參數(shù)資料
型號(hào): GFP60N03
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直|第60A條(?。﹟ TO - 220AB現(xiàn)有
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 113K
代理商: GFP60N03
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
±
20
V
Gate-Source Voltage
Continuous Drain Current
(1)
V
GS
I
D
60
A
Pulsed Drain Current
I
DM
100
Maximum Power Dissipation
T
C
= 25°C
T
C
= 100°C
P
D
62.5
25
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Lead Temperature (1/8” from case for 5 sec.)
T
L
275
°C
Junction-to-Case Thermal Resistance
R
θ
JC
2.0
°C/W
Junction-to-Ambient Thermal Resistance
R
θ
JA
62.5
°C/W
Notes:
(1) Maximum DC current limited by the package
GFP60N03
N-Channel Enhancement-Mode MOSFET
V
DS
30V
R
DS(ON)
11
m
I
D
60A
NewProduct
5/1/01
T
RENCH
G
EN
F
ET
TO-220AB
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Mechanical Data
Case:
JEDEC TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Torque:
10 in-lbs maximum
Weight:
2.0g
0.154 (3.91)
0.142 (3.60)
Dia.
0.560 (14.22)
0.530 (13.46)
G
D
S
1.148 (29.16)
1.118 (28.40)
0.022 (0.56)
0.014 (0.36)
0.113 (2.87)
0.102 (2.56)
0.205 (5.20)
0.190 (4.83)
*
May be notched or flat
0.360 (9.14)
0.330 (8.38)
PIN
0.415 (10.54)
Max.
0.105 (2.67)
0.095 (2.41)
D
0.155 (3.93)
0.134 (3.40)
0.635 (16.13)
0.580 (14.73)
0.410 (10.41)
0.350 (8.89)
0.160 (4.06)
0.09 (2.28)
0.037 (0.94)
0.026 (0.66)
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
0.104 (2.64)
0.094 (2.39)
*
G
D
S
Dimensions in inches
and (millimeters)
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