- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385298 > GB75DA120UP (VISHAY SEMICONDUCTORS) TRANSISTOR 131 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | GB75DA120UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | TRANSISTOR 131 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 75 Amp Generation V |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | GB75DA120UP |
GB75DA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
www.vishay.com
6
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 93011
Revision: 22-Jul-10
Fig. 16 - Maximum Thermal Impedance Z
thJC
Characteristics (diode)
Fig. 17a - Clamped Inductive Load Test Circuit
Fig. 17b - Pulsed Collector Current Test Circuit
Fig. 18a - Switching Loss Test Circuit
0.001
0.1
0.01
1
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (t
1
)
Z
t
J
1
Single p
u
lse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
* Driver same type as D.U.T.; V
C
= 80 % of V
* Note: D
u
e to the 50 V power s
u
pply, p
u
lse width and ind
u
ctor
will increase to obtain Id
50 V
1000 V
D.U.T.
L
V
C
*
2
1
R
g
V
CC
D.U.T.
R =
V
CC
I
CM
+
-
L
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
+
-
R
g
V
CC
+
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GBJ602 | Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A |
| GBJ603 | Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A |
| GBJ604 | Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A |
| GBJ606 | Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A |
| GBJ601 | Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GB75XF60K | 功能描述:IGBT 模塊 100 Amp 600 Volt Non-Punch Through RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GB75YF120N | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:IGBT FOUR PAK MODULE |
| GB75YF120UT | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:IGBT Fourpack Module, 75 A |
| GB7B | 制造商:Thomas & Betts 功能描述:Outlet Boxes , Drawn 31.2 Inch Octagonal And Outlet Boxes . 11.2 Inch Deep |
| GB7NB60KD | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。