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參數(shù)資料
| 型號(hào)： | GB75DA120UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 131 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 75 Amp Generation V |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 175K |
| 代理商： | GB75DA120UP |
GB75DA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
Document Number: 93011
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
5
Fig. 11 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 75 A, L = 500 μH,
V
CC
= 600 V, V
GE
= 15 V
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5
, V
GE
= 15 V
1
Fig. 13 - Typical t
rr
diode vs. dI
F
/dt
V
RR
= 200 V, I
F
= 50 A
Fig. 14 - Typical I
rr
diode vs. dI
F
/dt
V
RR
= 200 V, I
F
= 50 A
Fig. 15 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
E
R
G
(
Ω
)
0
10
20
30
40
50
0
14
6
10
8
12
4
2
E
on
E
off
S
R
G
(
Ω
)
0
20
30
10
40
50
10
10 000
1000
100
t
d(on)
t
d(off)
t
f
t
r
t
r
dI
F
/dt (A/μs)
100
1000
70
250
110
150
190
210
230
90
130
170
T
J
= 125 °C
T
J
= 25 °C
I
r
dI
F
/dt (A/μs)
100
1000
0
40
10
20
30
35
5
15
25
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.01
0.1
0.001
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (t
1
)
Z
t
J
1
Single p
u
lse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GB75XF60K | 功能描述:IGBT 模塊 100 Amp 600 Volt Non-Punch Through RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GB75YF120N | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT FOUR PAK MODULE |
| GB75YF120UT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IGBT Fourpack Module, 75 A |
| GB7B | 制造商:Thomas & Betts 功能描述:Outlet Boxes , Drawn 31.2 Inch Octagonal And Outlet Boxes . 11.2 Inch Deep |
| GB7NB60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT |
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