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參數(shù)資料
| 型號： | GB75DA120UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 131 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 75 Amp Generation V |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 175K |
| 代理商： | GB75DA120UP |
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
GB75DA120UP
Vishay Semiconductors
Document Number: 93011
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
1
FEATURES
NPT Generation V IGBT technology
Square RBSOA
HEXFRED
low Q
rr
, low switching energy
Positive V
CE(on)
temperature coefficient
Fully isolated package
Speed 8 kHz to 60 kHz
Very low internal inductance (
5 nH typical)
Industry standard outline
UL approved file E78996
Compliant to RoHS directive 2002/95/EC
BENEFITS
Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
Easy to assemble and parallel
Direct mounting on heatsink
Plug-in compatible with other SOT-227 packages
Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC
75 A at 95 °C
V
CE(on)
typical at 75 A, 25 °C
3.3 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S
YMBOL
TE
S
T CONDITION
S
MAX.
UNIT
S
Collector to emitter voltage
V
CES
1200
V
Continuous collector current
I
C
T
C
= 25 °C
131
A
T
C
= 80 °C
89
Pulsed collector current
I
CM
200
Clamped inductive load current
I
LM
200
Diode continuous forward current
I
F
T
C
= 25 °C
59
T
C
= 80 °C
39
Gate to emitter voltage
V
GE
± 20
V
Power dissipation, IGBT
P
D
T
C
= 25 °C
658
W
T
C
= 80 °C
369
Power dissipation, diode
P
D
T
C
= 25 °C
240
T
C
= 80 °C
135
Isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V
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