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參數(shù)資料
| 型號(hào)： | GB75DA120UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 131 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 75 Amp Generation V |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 175K |
| 代理商： | GB75DA120UP |
GB75DA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 93011
Revision: 22-Jul-10
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
S
YMBOL
TE
S
T CONDITION
S
MIN.
TYP.
MAX.
UNIT
S
Collector to emitter breakdown
voltage
V
BR(CES)
V
GE
= 0 V, I
C
= 250 μA
1200
-
-
V
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 75 A
-
3.3
3.8
V
GE
= 15 V, I
C
= 75 A, T
J
= 125 °C
-
3.6
3.9
Gate threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA
4
5
6
Temperature coefficient of
threshold voltage
V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
-
- 12
-
mV/°C
Collector to emitter leakage current
I
CES
V
GE
= 0 V, V
CE
= 1200 V
-
3
250
μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C
-
4
20
mA
Forward voltage drop
V
FM
I
C
= 75 A, V
GE
= 0 V
-
3.4
5.0
V
I
C
= 75 A, V
GE
= 0 V, T
J
= 125 °C
-
3.3
5.2
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V
-
-
± 200
nA
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
S
YMBOL
TE
S
T CONDITION
S
MIN.
TYP.
MAX.
UNIT
S
Total gate charge (turn-on)
Q
g
I
C
= 50 A, V
CC
= 600 V, V
GE
= 15 V
-
690
-
nC
Gate to emitter charge (turn-on)
Q
ge
-
65
-
Gate to collector charge (turn-on)
Q
gc
-
250
-
Turn-on switching loss
E
on
I
C
= 75 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
-
1.53
-
mJ
Turn-off switching loss
E
off
-
1.76
-
Total switching loss
E
tot
-
3.29
-
Turn-on switching loss
E
on
I
C
= 75 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 125 °C
-
2.49
-
Turn-off switching loss
E
off
-
3.45
-
Total switching loss
E
tot
-
5.94
-
Turn-on delay time
t
d(on)
-
281
-
ns
Rise time
t
r
-
45
-
Turn-off delay time
t
d(off)
-
300
-
Fall time
t
f
-
126
-
Reverse bias safe operating area
RBSOA
T
J
= 150 °C, I
C
= 200 A, R
g
= 22
V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
P
= 1200 V, L = 500 μH
Fullsquare
Diode reverse recovery time
t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
-
142
210
ns
Diode peak reverse current
I
rr
-
13
16
A
Diode recovery charge
Q
rr
-
923
1680
nC
Diode reverse recovery time
t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
-
202
260
ns
Diode peak reverse current
I
rr
-
18
22
A
Diode recovery charge
Q
rr
-
1818
2860
nC
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