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參數(shù)資料
| 型號： | GB75DA120UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 131 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 75 Amp Generation V |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 175K |
| 代理商： | GB75DA120UP |
Legal Disclaimer Notice
www.vishay.com
Vishay
Revision: 12-Mar-12
1
Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GB75XF60K | 功能描述:IGBT 模塊 100 Amp 600 Volt Non-Punch Through RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GB75YF120N | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT FOUR PAK MODULE |
| GB75YF120UT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IGBT Fourpack Module, 75 A |
| GB7B | 制造商:Thomas & Betts 功能描述:Outlet Boxes , Drawn 31.2 Inch Octagonal And Outlet Boxes . 11.2 Inch Deep |
| GB7NB60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT |
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