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參數(shù)資料
| 型號： | GB75DA120UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 131 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 75 Amp Generation V |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 175K |
| 代理商： | GB75DA120UP |
GB75DA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 93011
Revision: 22-Jul-10
Fig. 5 - Typical Diode Forward Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5
, V
GE
= 15 V
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
= 600 V,
R
g
= 5
, V
GE
= 15 V
I
F
V
FM
(V)
0
1
3
2
4
5
0
200
50
150
100
T
J
= 125 °C
T
J
= 25 °C
I
C
V
CES
(V)
0
200
400
600
800
1000
1200
0.0001
10
0.01
1
0.001
0.1
T
J
= 125 °C
T
J
= 25 °C
V
g
I
C
(mA)
0.0002
0.0004
0.0006
0.0008
0.001
3.0
6.0
4.0
4.5
5.0
5.5
3.5
T
J
= 125 °C
T
J
= 25 °C
V
C
T
J
(°C)
25
50
75
125
100
150
2.0
4.5
3.0
3.5
4.0
2.5
100 A
75 A
27 A
E
I
C
(A)
10
20
30
50
60
70
40
80
0
4.0
1.5
3.0
2.5
2.0
3.5
1.0
0.5
E
on
E
off
S
I
C
(A)
0
20
60
40
80
10
1000
100
t
d(off)
t
d(on)
t
f
t
r
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GB75XF60K | 功能描述:IGBT 模塊 100 Amp 600 Volt Non-Punch Through RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GB75YF120N | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT FOUR PAK MODULE |
| GB75YF120UT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IGBT Fourpack Module, 75 A |
| GB7B | 制造商:Thomas & Betts 功能描述:Outlet Boxes , Drawn 31.2 Inch Octagonal And Outlet Boxes . 11.2 Inch Deep |
| GB7NB60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT |
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