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參數(shù)資料
| 型號： | GB75DA120UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 131 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 75 Amp Generation V |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 175K |
| 代理商： | GB75DA120UP |
GB75DA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
Document Number: 93011
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
3
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
S
YMBOL
MIN.
TYP.
MAX.
UNIT
S
Maximum junction and
storage temperature range
T
J
, T
Stg
- 40
-
150
°C
Junction to case
IGBT
R
thJC
-
-
0.19
°C/W
Diode
-
-
0.52
Case to sink per module
R
thCS
-
0.05
-
Mounting torque, 6-32 or M3 screw
-
-
1.3
Nm
Weight
-
30
-
g
A
I
C
- Continuous Collector Current (A)
0
20
40
60
80
100
120
140
0
160
100
120
140
20
40
60
80
I
C
V
CE
(V)
100
1000
10 000
1
1000
10
100
I
C
V
CE
(V)
0
2
4
6
1
3
5
0
200
50
100
150
T
J
= 125 °C
T
J
= 25 °C
A
I
F
- Continuous Forward Current (A)
0
10
20
30
40
50
60
70
0
160
100
120
140
20
40
60
80
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GB75XF60K | 功能描述:IGBT 模塊 100 Amp 600 Volt Non-Punch Through RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GB75YF120N | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT FOUR PAK MODULE |
| GB75YF120UT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IGBT Fourpack Module, 75 A |
| GB7B | 制造商:Thomas & Betts 功能描述:Outlet Boxes , Drawn 31.2 Inch Octagonal And Outlet Boxes . 11.2 Inch Deep |
| GB7NB60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT |
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