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參數(shù)資料
| 型號： | FGL40N120AND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 1200V NPT IGBT |
| 中文描述： | 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 492K |
| 代理商： | FGL40N120AND |
5
www.fairchildsemi.com
FGL40N120AND Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
0
10
20
30
40
50
60
70
10
100
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
°
C
T
C
= 125
°
C
td(on)
tr
S
Gate Resistance, R
G
[
]
1
10
0
1000
2000
3000
4000
5000
6000
Ciss
Coss
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
°
C
Crss
C
Collector-Emitter Voltage, V
CE
[V]
0
10
20
30
40
50
60
70
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V, I
C
= 40A
T
C
= 25
°
C
T
C
= 125
°
C
td(off)
tf
S
Gate Resistance, R
G
[
]
0
10
20
30
40
50
60
70
1
10
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
°
C
T
C
= 125
°
C
Eon
Eoff
S
Gate Resistance, R
G
[
]
20
30
40
50
60
70
80
10
100
Common Emitter
V
GE
=
±
15V, R
G
= 5
T
C
= 25
°
C
T
C
= 125
°
C
tr
td(on)
S
Collector Current, I
C
[A]
20
30
40
50
60
70
80
100
Common Emitter
V
GE
=
±
15V, R
G
= 5
T
C
= 25
°
C
T
C
= 125
°
C
td(off)
tf
S
Collector Current, I
C
[A]
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGL40N120AND_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGL40N120ANDTU | 功能描述:IGBT 晶體管 1200V NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGL40N120ANDTU | 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 1.2KV 64A |
| FGL40N120ANTU | 功能描述:IGBT 晶體管 1200V NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGL40N150 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Electrical Characteristics of the IGBT |
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