參數(shù)資料
型號(hào)： FGL60N100BNTD
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： NPT-Trench IGBT
中文描述： 60 A, 1000 V, N-CHANNEL IGBT, TO-264AA
封裝： LEAD FREE, TO-264, 3 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 682K
代理商： FGL60N100BNTD
2004 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. A
IGBT
F
FGL60N100BNTD
NPT-Trench IGBT
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
Features
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.5 V @ I
C
= 60A
High Input Impedance
Built-in Fast Recovery Diode
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
FGL60N100BNTD
1000
±
25
60
42
120
15
180
72
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
0.69
2.08
25
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
G
C
E
TO-264
G
C
E
相關(guān)PDF資料
PDF描述
FGL60N100D Electrical Characteristics of IGBT
FGL60N170D Electrical Characteristics of IGBT
FGR15N40A Strobe Flash N-Channel Logic Level IGBT
FGR3000CV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE
FGR3000CV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGL60N100BNTDTU 功能描述:IGBT 晶體管 HIGH_POWER RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGL60N100D 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Electrical Characteristics of IGBT
FGL60N100DTU 功能描述:IGBT 晶體管 60A 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGL60N170D 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Electrical Characteristics of IGBT
FGL60N170DTU 功能描述:IGBT 晶體管 Copak Discrete IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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