參數(shù)資料
型號： FGL40N120AND
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 1200V NPT IGBT
中文描述： 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA
封裝： TO-264, 3 PIN
文件頁數(shù)： 1/9頁
文件大?。?/td> 492K
代理商： FGL40N120AND
2005 Fairchild Semiconductor Corporation
FGL40N120AND Rev. A
1
www.fairchildsemi.com
F
February 2005
FGL40N120AND
1200V NPT IGBT
Features
High speed switching
Low saturation voltage : V
CE(sat)
= 2.6 V @ I
C
= 40A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 75ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
Description
Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
offers an solution for application such as induction heating (IH),
motor control, general purpose inverters and uninterruptible
power supplies (UPS).
Absolute Maximum Ratings
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
G
C
E
G
C
E
TO-264
Symbol
Parameter
FGL40N120AND
Units
V
CES
V
GES
Collector-Emitter Voltage
1200
V
Gate-Emitter Voltage
±25
V
I
C
Collector Current
@T
C
= 25
°
C
@T
C
= 100
°
C
64
A
Collector Current
40
A
I
CM(1)
I
F
I
FM
Pulsed Collector Current
120
A
Diode Continuous Forward Current
@T
C
= 100
°
C
40
A
Diode Maximum Forward Current
240
A
P
D
Maximum Power Dissipation
@T
C
= 25
°
C
@T
C
= 100
°
C
500
W
Maximum Power Dissipation
200
W
SCWT
Short Circuit Withstand Time,
V
CE
= 600V, V
GE
= 15V, T
C
= 125
°
C
Operating Junction Temperature
10
μ
s
T
J
T
STG
-55 to +150
°
C
°
C
Storage Temperature Range
-55 to +150
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
300
°
C
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.25
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction-to-Case
--
0.7
Thermal Resistance, Junction-to-Ambient
--
25
相關PDF資料
PDF描述
FGL40N150 Electrical Characteristics of the IGBT
FGL40N150D Electrical Characteristics of the IGBT
FGL60N100BNTD NPT-Trench IGBT
FGL60N100D Electrical Characteristics of IGBT
FGL60N170D Electrical Characteristics of IGBT
相關代理商/技術參數(shù)
參數(shù)描述
FGL40N120AND_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT IGBT
FGL40N120ANDTU 功能描述:IGBT 晶體管 1200V NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGL40N120ANDTU 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 1.2KV 64A
FGL40N120ANTU 功能描述:IGBT 晶體管 1200V NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGL40N150 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Electrical Characteristics of the IGBT
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*