參數(shù)資料
型號: FGL60N170D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Electrical Characteristics of IGBT
中文描述: 60 A, 1700 V, N-CHANNEL IGBT, TO-264AA
封裝: TO-264, 3 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 558K
代理商: FGL60N170D
2001 Fairchild Semiconductor Corporation
October 2001
FGL60N170D Rev. B
IGBT
F
FGL60N170D
General Description
Fairchild’s Insulated Gate Bipolar Transistor
(
IGBT)
provides low conduction and switching losses.
FGL60N170D is designed for the Induction Heating
applications.
Features
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 5.0 V @ I
C
= 60A
High Input Impedance
Built-in Fast Recovery Diode
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
FGL60N170D
1700
±
25
60
30
180
15
150
200
80
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
I
FM
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
A
Parameter
Typ.
--
--
--
Max.
0.625
0.83
25
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
G
C
E
G
C
E
TO-264
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