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參數(shù)資料
| 型號： | FGH50N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 195K |
| 代理商： | FGH50N6S2D |
2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2
F
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
15
25
o
C
125
o
C
75
60
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
3.5
3.0
30
45
100
50
0
t
r
,
I
EC
, FORWARD CURRENT (A)
2
30
10
6
150
200
125
o
C t
a
125
o
C t
rr
175
26
18
22
14
125
o
C t
b
25
o
C t
rr
dI
EC
/dt = 200A/
μ
s, V
CE
= 390V
25
75
125
25
o
C t
a,
t
b
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 30A, V
CE
= 390V
t
a
,
b
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
50
0
75
100
125
150
25
1200
200
400
1000
600
800
600
400
200
0
Q
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1200
800
200
400
1000
1200
600
800
125
o
C, I
EC
= 30A
125
o
C, I
EC
= 15A
25
o
C, I
EC
= 15A
25
o
C, I
EC
= 30A
V
CE
= 390V
1000
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
0
2.0
1.5
3.0
2.5
V
CE
= 390V, T
J
= 125
°
C
I
EC
= 30A
I
EC
= 15A
S
1200
1000
400
200
600
800
1.0
0.5
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
5
15
10
30
20
I
EC
= 30A
I
EC
= 15A
I
R
,
1200
1000
400
200
600
800
25
V
CE
= 390V, T
J
= 125
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶體管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH60N60SF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFDTU | 功能描述:IGBT 晶體管 N-Ch/ 60A 600V FS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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