- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375796 > FGH60N6S2 (FAIRCHILD SEMICONDUCTOR CORP) 600V, SMPS II Series N-Channel IGBT PDF資料下載
參數(shù)資料
| 型號： | FGH60N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 175K |
| 代理商： | FGH60N6S2 |
2003 Fairchild Semiconductor Corporation
August 2003
FGH60N6S2 Rev. A2
F
FGH60N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH60N6S2 is a Low Gate Charge, Low Plateau Volt-
age SMPS II IGBT combining the fast switching speed of
the SMPS IGBTs along with lower gate charge and plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high volt-
age switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially de-
signed for:
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Formerly Developmental Type TA49346.
Features
100kHz Operation at 390V, 52A
200kHZ Operation at 390V, 31A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . .77ns at TJ = 125
o
C
Low Gate Charge . . . . . . . . 140nC at V
GE
= 15V
Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
Low Conduction Loss
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
Parameter
Ratings
600
75
75
320
±20
±30
200A at 600V
700
625
5
-55 to 150
-55 to 150
Units
V
A
A
A
V
V
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Pulsed Avalanche Energy, I
CE
= 20A, L = 1.3mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
mJ
W
W/°C
°C
°C
T
J
T
STG
Package
Symbol
C
E
G
TO-247
E
C
G
COLLECTOR
(Back-Metal)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FGK60N6S2D | INDUSTRIAL POWER SUPPLY, 85-265VAC/120-330VDC INPUT, 24V@14A RoHS Compliant: Yes |
| FGL40N120AND | 1200V NPT IGBT |
| FGL40N150 | Electrical Characteristics of the IGBT |
| FGL40N150D | Electrical Characteristics of the IGBT |
| FGL60N100BNTD | NPT-Trench IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGH60N6S2 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH75N60SF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT |
| FGH75N60SFTU | 功能描述:IGBT 晶體管 N-CH/75A 600V FS Planar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH75N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT |
| FGH75N60UFTU | 功能描述:IGBT 晶體管 N-CH / 600V 75A FS Planar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。