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參數(shù)資料
| 型號(hào)： | FGH50N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 195K |
| 代理商： | FGH50N6S2D |
2002 Fairchild Semiconductor Corporation
July 2002
FGH50N6S2D RevA2
F
FGH50N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
Diode
General Description
The FGH50N6S2D is a Low Gate Charge, Low Plateau
Voltage SMPS II IGBT combining the fast switching speed
of the SMPS IGBTs along with lower gate charge, plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high volt-
age switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially de-
signed for:
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49344
Diode formerly Developmental Type TA49392
Features
100kHz Operation at 390V, 40A
200kHZ Operation at 390V, 25A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . .90ns at TJ = 125
o
C
Low Gate Charge . . . . . . . . . 70nC at V
GE
= 15V
Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ
Low Conduction Loss
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
Parameter
Ratings
600
75
60
240
±20
±30
150A at 600V
480
463
3.7
-55 to 150
-55 to 150
Units
V
A
A
A
V
V
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Pulsed Avalanche Energy, I
CE
= 30A, L = 1mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
mJ
W
W/°C
°C
°C
T
J
T
STG
Package
JEDEC STYLE TO-247
Symbol
G
C
E
C
E
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶體管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH60N60SF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFDTU | 功能描述:IGBT 晶體管 N-Ch/ 60A 600V FS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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