參數(shù)資料
型號(hào): FGH50N6S2D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
中文描述: 75 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 195K
代理商: FGH50N6S2D
2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2
F
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
20
0
40
25
75
100
125
150
140
80
120
60
100
PACKAGE LIMITED
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
100
150
50
200
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
μ
H
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
300
60
10
30
700
100
T
J
= 125
o
C, R
G
= 3
, L = 200
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
= 15V
T
C =
75
o
C
V
GE
= 10V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
11
12
15
10
6
300
500
900
t
SC
I
SC
800
13
14
12
14
8
200
400
600
700
10
16
4
2
0
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
0.50
1.00
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
1.25
2.00
2.25
40
30
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 15V
60
T
J
= 25
o
C
0.75
50
1.50
1.75
T
J
= 125
o
C
T
J
= 150
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
20
40
30
60
0.50
1.00
1.50
2.0
2.25
0.75
T
J
= 150
o
C
T
J
= 125
o
C
1.75
1.25
50
DUTY CYCLE < 0.5%, V
GE
=10V
PULSE DURATION = 250
μ
s
T
J
= 25
o
C
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