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參數資料
| 型號： | FGH50N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 195K |
| 代理商： | FGH50N6S2D |
2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
I
C
,
0
25
50
5
6
7
8
10
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
75
150
175
4
125
100
200
225
250
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
TJ = -55
o
C
TJ = 25
o
C
TJ = 125
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
10
0
6
I
G(REF)
= 1mA, R
L
= 10
V
CE
4
8
12
V
CE
= 600V
10
20
30
40
0
V
CE
= 400V
14
16
50
60
70
80
I
CE
= 15A
0
1.5
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
2.0
125
25
150
3.0
E
T
,
R
G
= 3
, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
2.5
I
CE
= 60A
I
CE
= 30A
1.0
0.5
0.1
10
100
R
G
, GATE RESISTANCE (
)
1.0
1000
E
T
,
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 15A
I
CE
= 30A
I
CE
= 60A
T
J
= 125
o
C, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
100
10
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
10
20
30
40
50
0.0
1.0
3.0
3.5
4.0
2.0
FREQUENCY = 1MHz
C
OES
C
IES
60
70
80
90
100
0.5
1.5
1
2.5
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
1.7
9
1.8
2.0
1.9
8
10
11
12
16
2.1
2.3
V
C
,
I
CE
= 45A
PULSE DURATION = 250
μ
s
I
CE
= 30A
I
CE
= 15A
2.2
7
13
14
15
DUTY CYCLE < 0.5%
2.5
2.4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶體管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH60N60SF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFDTU | 功能描述:IGBT 晶體管 N-Ch/ 60A 600V FS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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