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參數(shù)資料
| 型號(hào)： | FGH50N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 195K |
| 代理商： | FGH50N6S2D |
2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
E
O
,
μ
J
750
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
500
1000
0
2000
10
20
30
40
50
60
0
1500
1250
1750
250
2250
2500
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
20
30
40
50
60
0
E
O
,
μ
J
600
400
800
0
1200
1000
1400
200
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
0
5
10
15
20
10
20
30
40
50
60
0
T
J
= 25
o
C, T
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
25
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
30
10
70
60
40
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
20
10
30
40
50
60
0
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
50
20
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
60
40
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
90
80
70
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
20
10
30
40
50
60
0
100
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
25
50
75
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
100
20
10
30
40
50
60
0
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
125
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
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