參數(shù)資料
型號: FGH50N3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 300V, PT N-Channel IGBT
中文描述: 75 A, 300 V, N-CHANNEL IGBT, TO-247
封裝: TO-247, 3 PIN
文件頁數(shù): 6/8頁
文件大小: 183K
代理商: FGH50N3
2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
F
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted (Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
R
G
= 5
L = 100
μ
H
V
DD
= 180V
+
-
FFH30US30S
DIODE 49449
FGH50N3
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGH50N3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
FGH50N6S2 功能描述:IGBT 晶體管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGH50N6S2D 功能描述:IGBT 晶體管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGH50N6S2D 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
FGH50T65UPD 功能描述:IGBT 晶體管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube