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參數(shù)資料
| 型號： | FGH50N3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 300V, PT N-Channel IGBT |
| 中文描述： | 75 A, 300 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 183K |
| 代理商： | FGH50N3 |
2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted (Continued)
E
O
,
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 5
, L = 100
μ
H, V
CE
= 180V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
40
50
60
0
50
100
150
200
250
300
350
400
E
O
μ
J
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 5
, L = 100
μ
H, V
CE
= 180V
0
10
20
30
40
50
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
15
20
25
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
30
35
0
10
20
30
40
50
60
R
G
= 5
, L = 100
μ
H, V
CE
= 180V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
0
10
20
30
40
50
60
0
20
40
60
80
100
R
G
= 5
, L = 100
μ
H, V
CE
= 180V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
0
10
20
30
40
50
60
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
100
110
120
130
140
150
160
170
R
G
= 5
, L = 100
μ
H, V
CE
= 180V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
T
J
= 25
o
C, V
GE
= 10V, 15V
T
J
= 125
o
C, V
GE
= 10V, 15V
R
G
= 5
, L = 100
μ
H, V
CE
= 180V
0
10
20
30
40
50
60
0
4
8
16
12
24
20
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|---|---|
| FGH50N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50N6S2 | 功能描述:IGBT 晶體管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH50N6S2D | 功能描述:IGBT 晶體管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶體管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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