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參數資料
| 型號： | FGH50N3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 300V, PT N-Channel IGBT |
| 中文描述： | 75 A, 300 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 183K |
| 代理商： | FGH50N3 |
2002 Fairchild Semiconductor Corporation
July 2002
FGH50N3 Rev. A
F
FGH50N3
300V, PT N-Channel IGBT
General Description
The FGH50N3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for medium frequency switch mode power
supplies.
Features
Low V
CE(SAT)
. . . . . . . . . . . . . . . . . . . < 1.4V max
Low E
OFF
. . . . . . . . . . . . . . . . . . . . . . . . . < 200
μ
J
SCWT (@ T
J
= 125°C). . . . . . . . . . . . . . . . . > 8
μ
s
300V Switching SOA Capability
Positive V
CE(SAT)
Temperature Coefficient above
50A
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
E
ARV
P
D
Parameter
Ratings
300
75
75
240
±20
±30
150A at 300V
800
800
463
3.7
-55 to 150
-55 to 150
8
Units
V
A
A
A
V
V
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Single Pulse Avalanche Energy, I
CE
= 30A, L = 1.78mH, V
DD
= 50V
Single Pulse Reverse Avalanche Energy, I
EC
= 30A, L = 1.78mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Short Circuit Withstand Time (Note 2)
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 180V, T
J
= 125°C, V
GE
= 12Vdc, R
G
= 5
mJ
mJ
W
W/°C
°C
°C
μ
s
T
J
T
STG
t
SC
Package
Symbol
TO-247
E
C
G
COLLECTOR
(FLANGE)
C
E
G
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGH50N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50N6S2 | 功能描述:IGBT 晶體管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH50N6S2D | 功能描述:IGBT 晶體管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶體管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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