參數(shù)資料
型號: FGH50N3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 300V, PT N-Channel IGBT
中文描述: 75 A, 300 V, N-CHANNEL IGBT, TO-247
封裝: TO-247, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 183K
代理商: FGH50N3
2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
F
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
40
0
80
25
75
100
125
150
200
160
120
V
GE
= 15V
PACKAGE LIMITED
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
350
0
I
C
,
150
200
100
50
250
300
0
75
125
50
175
T
J
= 150
o
C, R
G
= 5
, V
GE
= 15V, L = 25
μ
H
150
100
25
f
M
,
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 125
o
C, R
G
= 5
, L = 100
μ
H, V
CE
= 180V
T
C =
75
o
C
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
= 15V
V
GE
= 10V
60
100
200
300
400
500
2
10
20
100
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
11
12
20
10
300
500
13
14
25
15
200
400
600
800
10
16
5
0
t
SC
I
SC
V
CE
= 180V, R
G
= 5
, T
J
= 125
o
C
15
700
30
0.25
0.75
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
1.0
1.75
40
30
60
0.5
T
J
= 150
o
C
1.25
1.5
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 10V
T
J
= 125
o
C
50
2.0
T
J
= 25
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 125
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 15V
0
10
20
40
30
60
50
0.25
0.5
0.75
1.0
1.25
1.5
1.75
T
J
= 150
o
C
T
J
= 25
o
C
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參數(shù)描述
FGH50N3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
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FGH50N6S2D 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
FGH50T65UPD 功能描述:IGBT 晶體管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube