參數(shù)資料
型號(hào)： FF200R12KE3
廠商： INFINEON TECHNOLOGIES AG
元件分類(lèi)： IGBT 晶體管
英文描述： IGBT-Module
中文描述： 295 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-7
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 222K
代理商： FF200R12KE3
1
Technische Information / technical information
FF200R12KE3
IGBT-modules
IGBT-Module
prepared by: Mark Münzer
approved by: Wilhelm Rusche
date of publication: 2004-4-8
revision: 3.1
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C, TY = 150°C
T = 25°C, TY = 150°C
I òó
I
200
295
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 80°C
I￠
400
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C, TY = 150°C
Púóú
1050
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I = 200 A, V = 15 V
I = 200 A, V = 15 V
V ùèú
1,70
2,00
2,15
V
V
TY = 25°C
TY = 125°C
Gate-Schwellenspannung
gate threshold voltage
I = 8,00 mA, V = V, TY = 25°C
Vúì
5,0
5,8
6,5
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
1,90
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
3,8
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
14,0
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
0,50
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 1200 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 200 A, V = 600 V
V = ±15 V
Róò = 3,6
tá óò
0,25
0,30
μs
μs
TY = 25°C
TY = 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 200 A, V = 600 V
V = ±15 V
Róò = 3,6
t
0,09
0,10
μs
μs
TY = 25°C
TY = 125°C
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 200 A, V = 600 V
V = ±15 V
Ró = 3,6
tá ó
0,55
0,65
μs
μs
TY = 25°C
TY = 125°C
Fallzeit (induktive Last)
fall time (inductive load)
I = 200 A, V = 600 V
V = ±15 V
Ró = 3,6
t
0,13
0,18
μs
μs
TY = 25°C
TY = 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 200 A, V = 600 V
V = ±15 V, L = 80 nH
Róò = 3,6
Eóò
15,0
mJ
mJ
TY = 25°C
TY = 125°C
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 200 A, V = 600 V
V = ±15 V, L = 80 nH
Ró = 3,6
Eó
35,0
mJ
mJ
TY = 25°C
TY = 125°C
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TY = 125°C, V = 900 V, Vèà = V -Lù ·di/dt
I
800
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
0,12
K/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FF200R12KE3_B2 功能描述:IGBT 模塊 N-CH 1.2KV 295A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FF200R12KE4 功能描述:IGBT 模塊 IGBT-MODULE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FF200R12KF 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048
FF200R12KF2 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HD5.6
FF200R12KL 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048
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