參數(shù)資料
型號(hào)： FF800R17KE3
廠商： INFINEON TECHNOLOGIES AG
元件分類： IGBT 晶體管
英文描述： IGBT-inverter
中文描述： 1150 A, 1700 V, N-CHANNEL IGBT
封裝： MODULE-10
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 216K
代理商： FF800R17KE3
1
Technische Information / technical information
IGBT-Module
IGBT-modules
FF800R17KE3
prepared by: Martin Wlz
approved by: Christoph Lübke
date of publication: 2003-4-10
revision: 2.0
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
1700
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C
T = 25°C
I òó
I
800
1150
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 80°C
I￠
1600
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C
Púóú
4,45
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
I = 800 A, V = 15 V, TY = 25°C
I = 800 A, V = 15 V, TY = 125°C
V ùèú
2,00
2,40
2,45
V
V
Gate-Schwellenspannung
gate threshold voltage
I = 32,0 mA, V = V, TY = 25°C
Vúì
5,2
5,8
6,4
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
9,00
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
1,9
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
75,0
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
2,30
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 1700 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 800 A, V = 900 V
V = ±15 V, Róò = 1,8 , TY = 25°C
V = ±15 V, Róò = 1,8 , TY = 125°C
tá óò
0,45
0,50
μs
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 800 A, V = 900 V
V = ±15 V, Róò = 1,8 , TY = 25°C
V = ±15 V, Róò = 1,8 , TY = 125°C
t
0,14
0,15
μs
μs
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 800 A, V = 900 V
V = ±15 V, Ró = 2,2 , TY = 25°C
V = ±15 V, Ró = 2,2 , TY = 125°C
tá ó
1,20
1,40
μs
μs
Fallzeit (induktive Last)
fall time (inductive load)
I = 800 A, V = 900 V
V = ±15 V, Ró = 2,2 , TY = 25°C
V = ±15 V, Ró = 2,2 , TY = 125°C
t
0,14
0,25
μs
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 800 A, V = 900 V, L = 50 nH
V = ±15 V, Róò = 1,8 , TY = 25°C
V = ±15 V, Róò = 1,8 , TY = 125°C
Eóò
160
240
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 800 A, V = 900 V, L = 50 nH
V = ±15 V, Ró = 2,2 , TY = 25°C
V = ±15 V, Ró = 2,2 , TY = 125°C
Eó
210
280
mJ
mJ
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TYù125°C, V = 1000 V, Vèà = V -Lù ·di/dt
I
3100
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
28,0 K/kW
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
17,0
K/kW
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參數(shù)描述
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