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參數(shù)資料
| 型號： | FF300R17KE3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 62mm C-series module with trench/fieldstop IGBT3 and EmCon3 diode |
| 中文描述： | 404 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 243K |
| 代理商： | FF300R17KE3 |
62mm C-Serien Modul mit Trench/Feldstop IGBT3 und EmCon3 Diode
62mm C-series module with trench/fieldstop IGBT3 and EmCon3 diode
1
Technische Information / technical information
FF300R17KE3
IGBT-Module
IGBT-modules
prepared by: Helmut Seidelmann
approved by: Wilhelm Rusche
date of publication: 2006-4-27
revision: 2.1
Vorlufige Daten / preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
1700
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C, TY = 150°C
T = 25°C, TY = 150°C
I òó
I
300
404
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms
I￠
600
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C, TY = 150°C
Púóú
1450
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I = 300 A, V = 15 V
I = 300 A, V = 15 V
V ùèú
2,00
2,40
2,45
V
V
TY = 25°C
TY = 125°C
Gate-Schwellenspannung
gate threshold voltage
I = 12,0 mA, V = V, TY = 25°C
Vúì
5,2
5,8
6,4
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
3,50
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
2,5
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
27,0
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
0,90
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 1700 V, V = 0 V, TY = 25°C
I
3,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 300 A, V = 900 V
V = ±15 V
Róò = 4,7
tá óò
0,28
0,30
μs
μs
TY = 25°C
TY = 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 300 A, V = 900 V
V = ±15 V
Róò = 4,7
t
0,08
0,10
μs
μs
TY = 25°C
TY = 125°C
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 300 A, V = 900 V
V = ±15 V
Ró = 4,7
tá ó
0,80
1,00
μs
μs
TY = 25°C
TY = 125°C
Fallzeit (induktive Last)
fall time (inductive load)
I = 300 A, V = 900 V
V = ±15 V
Ró = 4,7
t
0,12
0,20
μs
μs
TY = 25°C
TY = 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 300 A, V = 900 V, L = 60 nH
V = ±15 V, di/dt = 3600 A/μs (TY=125°C)
Róò = 4,7
Eóò
71,0
105
mJ
mJ
TY = 25°C
TY = 125°C
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 300 A, V = 900 V, L = 60 nH
V = ±15 V, du/dt = 3500 V/μs (TY=125°C)
Ró = 4,7
Eó
64,0
94,0
mJ
mJ
TY = 25°C
TY = 125°C
Kurzschlussverhalten
SC data
V ù 15 V, V = 1000 V
Vèà = V -Lù ·di/dt
I
1200
A
TY = 125°C
t ù 10 μs,
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
0,085 K/W
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
0,033
K/W
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| FF300R17KE3_S4 | 制造商:Infineon Technologies AG 功能描述:IGBT Module 300A 1700V |
| FF300R17KE3_S4ENG C# | 制造商:Infineon Technologies AG 功能描述: |
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| FF300R17ME3 | 功能描述:IGBT 模塊 N-CH 1.7KV 375A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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