參數(shù)資料
型號(hào)： FDZ206P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel 2.5V Specified PowerTrench
中文描述： 13 A, 20 V, 0.0095 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ULTRA THIN, BGA-30
文件頁數(shù)： 2/6頁
文件大?。?/td> 214K
代理商： FDZ206P
FDZ206P Rev. D1 (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
Drain
–Source Breakdown Voltage V
GS
= 0 V,
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Forward Leakage
I
GSSR
Gate–Body Reverse Leakage
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–13
mV/
°
C
V
DS
= –16 V,
V
GS
= –12 V,
V
GS
= 12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
–100
100
μ
A
nA
nA
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= – 4.5 V, I
D
= –13 A
V
GS
= –2.5 V,
I
= –10.5 A
V
GS
= –4.5 V, I
D
= –13 A, T
J
=125
°
C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –13 A
I
D
= –250
μ
A
–0.6
–0.9
3.3
–1.5
V
Gate Threshold Voltage
mV/
°
C
7
10
9
58
9.5
14.5
13
m
I
D(on)
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
Drain
–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain
–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
On–State Drain Current
Forward Transconductance
–60
A
S
4280
873
400
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
17
11
115
60
38
7
10
31
20
184
96
53
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –13 A,
–1.8
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.8 A
(Note 2)
–0.7
34
38
nS
nC
I
F
= –13A,
d
iF
/d
t
= 100 A/μs
Notes:
1.
R
is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the
circuit board side of the solder ball, R
, is defined for reference. For R
, the thermal reference point for the case is defined as the top surface of the copper
chip carrier. R
θ
JC
and R
θ
JB
are guaranteed by design while R
θ
JA
is determined by the user's board design.
a)
56°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
119°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDZ206P_Q 功能描述:MOSFET 20V/12V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ208P 功能描述:MOSFET 30V/25V PCh MOSFET BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ208P_Q 功能描述:MOSFET 30V/25V PCh MOSFET BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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