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參數(shù)資料
| 型號： | FDZ2551N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET |
| 中文描述： | 9 A, 20 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-18 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | FDZ2551N |
November 1999
ADVANCE INFORMATION
FDZ2551N
Dual N-Channel 2.5V Specified PowerTrench
TM
BGA MOSFET
1999 Fairchild Semiconductor Corporation
FDZ2551N Rev A1(W)
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ2551N minimizes both PCB space
and R
. This dual BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Fairchild’s
advanced
2.5V
specified
Applications
=
Battery management
=
Load switch
=
Battery protection
Features
=
9 A, 20 V.
R
DS(ON)
= 0.018
=
@ V
GS
= 4.5 V
R
DS(ON)
= 0.030
@ V
GS
= 2.5 V.
=
Occupies only 0.10 cm
2
of PCB area.
1/3 the area of SO-8.
=
Ultra-thin package: less than 0.70 mm height when
mounted to PCB.
=
Outstanding thermal transfer characteristics:
significantly better than SO-8.
=
Ultra-low Q
g
x R
DS(ON)
figure-of-merit.
=
High power and current handling capability.
Q2
Q1
Pin 1
G
S
D
D
S
S
S
D
S
S
S
S
G
S
S
D
D
D
Bottom
Pin 1
F
Top
S
S
G
G
D
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
stg
Operating and Storage Junction Temperature Range
Ratings
20
±
12
9
20
3
-55 to +175
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
8
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
F2551
FDZ2551N
Reel Size
TBD
Tape width
TBD
Quantity
TBD
F
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| FDZ2552P | Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET |
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| FDZ2553N | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench |
| FDZ2554PZ | Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET |
| FDZ2554P | Monolithic Common Drain P-Channel 2.5V Specified PowerTrench |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDZ2552P | 功能描述:MOSFET 20V/12V NCh MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553N | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553N_Q | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553NZ | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553NZ_Q | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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