參數資料
型號： FDZ208P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel 30 Volt PowerTrench
中文描述： 12.5 A, 30 V, 0.0105 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ULTRA THIN, BGA-30
文件頁數： 1/6頁
文件大?。?/td> 185K
代理商： FDZ208P
May 2004
2004 Fairchild Semiconductor Corporation
FDZ208P Rev C3 (W)
FDZ208P
P-Channel 30 Volt PowerTrench BGA MOSFET
General Description
Combining Fairchild
’s advanced 30 Volt P-Channel
Trench II Process with
±
25 Volts Vgs. Abs. Max Gate
Rating for the ultimate low Rds Battery Protection
MOSFET.
This
MOSFET
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
also
embodies
a
Applications
Battery management
Load switch
Battery protection
Features
–12.5 A, –30 V. R
DS(ON)
= 10.5 m
@ V
GS
= –10 V
R
DS(ON)
= 16.5 m
@ V
GS
= –4.5 V
Occupies only 14 mm
2
of PCB area. Only 42% of
the area of SO-8
Ultra-thin package: less than 0.8 mm height when
mounted to PCB
3.5 x 4 mm
2
footprint
High power and current handling capability
Pin 1
D
D
S
S
S
D
S
S
S
S
D
S
S
S
S
D
S
S
S
S
D
D
D
D
D
D
D
D
D
G
Bottom
Pin 1
F
Top
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
P
D
T
J
, T
stg
Operating and Storage Junction Temperature Range
Ratings
–30
±
25
–12.5
–60
2.2
1.0
–55 to +150
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1a)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
56
4.5
0.6
°
C/W
Package Marking and Ordering Information
Device Marking
Device
208P
FDZ208P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
相關PDF資料
PDF描述
FDZ209N 60V N-Channel PowerTrench BGA MOSFET
FDZ2551N Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
FDZ2552P Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
FDZ2553NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ2553N Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
相關代理商/技術參數
參數描述
FDZ208P_Q 功能描述:MOSFET 30V/25V PCh MOSFET BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ209N 功能描述:MOSFET 60V/20V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ209N_Q 功能描述:MOSFET 60V/20V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FD-Z20HBW 制造商:PANASONIC INDUSTRIAL AUTOMATION SALES 功能描述:FIBER FLAT DIFFUSE REFLECT R1 制造商:Panasonic Electric Works 功能描述:SENSOR, FIBRE OPTIC, REFLECTIVE, 85MM, Fiber Optic Sensor Type:Reflective, Sensing Range Max:85mm , RoHS Compliant: Yes 制造商:Panasonic Industrial Devices 功能描述:SENSOR, FIBRE OPTIC, REFLECTIVE, 85MM, Fiber Optic Sensor Type:Reflective, Sensi
FD-Z20W 制造商:Panasonic Industrial Company 功能描述:FIBER DIFFUSE REFLECT FLAT R1
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*