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參數(shù)資料
| 型號： | FDZ206P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5V Specified PowerTrench |
| 中文描述： | 13 A, 20 V, 0.0095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-30 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 214K |
| 代理商： | FDZ206P |
January 2003
2003 Fairchild Semiconductor Corporation
FDZ206P Rev. D1(W)
FDZ206P
P-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ206P minimizes both PCB space
and R
. This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Fairchild
’s
2.5V
specified
Applications
Battery management
Load switch
Battery protection
Features
–13 A, –20 V. R
DS(ON)
= 9.5 m
@ V
GS
= –4.5 V
R
DS(ON)
= 14.5 m
@ V
GS
= –2.5 V
Occupies only 14 mm
2
of PCB area.
Only 42% of the area of SO-8
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
0.65 mm ball pitch
3.5 x 4 mm
2
footprint
High power and current handling capability
Pin 1
D
D
S
S
S
D
S
S
S
S
D
S
S
S
S
D
S
S
S
S
D
D
D
D
D
D
D
D
D
G
Bottom
Pin 1
F
Top
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
12
–13
–60
2.2
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
56
4.5
0.6
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
206P
FDZ206P
Reel Size
13”
Tape width
12mm
Quantity
3000
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDZ206P_Q | 功能描述:MOSFET 20V/12V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ208P | 功能描述:MOSFET 30V/25V PCh MOSFET BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ208P_Q | 功能描述:MOSFET 30V/25V PCh MOSFET BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ209N | 功能描述:MOSFET 60V/20V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ209N_Q | 功能描述:MOSFET 60V/20V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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