參數(shù)資料
型號(hào)： FDS6699S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 30V N-Channel PowerTrench SyncFET
中文描述： 21000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 526K
代理商： FDS6699S
2
www.fairchildsemi.com
FDS6699S Rev. D
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1. R
θ
θ
JA
JC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
θ
CA
is determined by the user's board design.
R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= 1 mA, Referenced to 25
= 0 V, I
D
= 1 mA
30
V
DSS
J
Breakdown Voltage Temperature
Coefficient
I
D
°
C
28
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
μ
A
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
= ±20 V, V
DS
= 0 V
±100
nA
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= 1 mA, Referenced to 25
= V
GS
, I
D
= 1 mA
1
1.4
3
V
J
Gate Threshold Voltage Temperature
Coefficient
I
D
°
C
–3.2
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
= 10 V, I
= 4.5 V, I
=10 V, I
D
D
=21 A, T
= 21 A
= 19 A
D
J
=125
°
C
3.0
3.6
4.6
3.6
4.5
5.6
m
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 21 A
100
S
Dynamic Characteristics
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= 15 V, V
GS
= 0 V,
3610
pF
C
oss
Output Capacitance
1050
pF
C
rss
Reverse Transfer Capacitance
340
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
0.4
1.8
3.1
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= 15 V, I
= 10 V, R
D
= 1 A,
GEN
= 6
11
20
ns
t
r
Turn–On Rise Time
12
22
ns
t
d(off)
Turn–Off Delay Time
73
117
ns
t
f
Turn–Off Fall Time
38
61
ns
Q
g(TOT)
Total Gate Charge at Vgs = 10V
V
DD
= 15 V, I
D
= 21 A,
65
91
nC
Q
g
Total Gate Charge at Vgs = 5V
35
49
nC
Q
gs
Gate–Source Charge
9
nC
Q
gd
Gate–Drain Charge
11
nC
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward Voltage
V
GS
= 21 A,
/d
t
= 300 A/μs (Note 3)
= 0 V, I
S
= 3.5 A (Note 2)
0.36
0.7
V
t
rr
Diode Reverse Recovery Time
I
d
F
iF
32
ns
I
RM
Q
Diode Reverse Recovery Current
2.2
A
rr
Diode Reverse Recovery Charge
35
nC
a) 50°/W when mounted
on a 1 in
copper
pad of 2 oz
b) 105°/W when mounted
on a .04 in
copper
pad of 2 oz
c) 125°/W when mounted
on a minimum pad.
相關(guān)PDF資料
PDF描述
FDS6812 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6814 Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDS6815 Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6812 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6812A 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6814 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDS6815 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDS6875 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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