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參數(shù)資料
| 型號： | FDS6812 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| 中文描述： | 雙N溝道邏輯電平PWM優(yōu)化的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 79K |
| 代理商： | FDS6812 |
November 2001
2001 Fairchild Semiconductor Corporation
FDS6812A Rev B (W)
FDS6812A
Dual N-Channel Logic Level PWM Optimized PowerTrench
MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
advanced
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
6.7 A, 20 V.
R
DS(ON)
= 22 m
@ V
GS
= 4.5 V
R
DS(ON)
= 35 m
@ V
GS
= 2.5 V
Low gate charge (12 nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
SO-8
D
D
D
D2
D2
D1
D1
S2G2S1G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Ratings
20
±
12
6.7
35
2
1.6
1
0.9
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6812A
FDS6812A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6812A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6814 | Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDS6815 | Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDS6875 | Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDS6890A | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6812A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6814 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDS6815 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDS6875 | 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6875 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8 |
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