參數(shù)資料
型號： FDS6699S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 30V N-Channel PowerTrench SyncFET
中文描述： 21000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數(shù)： 1/6頁
文件大?。?/td> 526K
代理商： FDS6699S
2005 Fairchild Semiconductor Corporation
FDS6699S Rev. D
1
www.fairchildsemi.com
January 2005
F
FDS6699S
30V N-Channel PowerTrench
SyncFET
Features
■
21 A, 30 V
Max R
Max R
DS(ON)
DS(ON)
= 3.6 m
= 4.5 m
@ V
@ V
GS
GS
= 10 V
= 4.5 V
■
Includes SyncFET Schottky body diode
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
100% R
G
(Gate Resistance) tested
■
■
■
Applications
■
Synchronous Rectifier for DC/DC Converters –
■
Notebook Vcore low side switch
■
Point of Load low side switch
General Description
The FDS6699S is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low R
DS(ON)
FDS6699S includes an integrated Schottky diode using Fair-
child’s monolithic SyncFET technology.
and low gate charge. The
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Drain Current
– Continuous
(Note 1a)
21
A
– Pulsed
105
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +125
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6699S
FDS6699S
13’’
12mm
2500 units
S
D
S
S
SO-8
D
D
D
G
5
6
7
8
4
3
2
1
相關(guān)PDF資料
PDF描述
FDS6812 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6814 Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDS6815 Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6812 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6812A 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6814 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDS6815 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDS6875 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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