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參數(shù)資料
| 型號： | FDS6875 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 6 A, 20 V, 0.03 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 194K |
| 代理商： | FDS6875 |
November 1998
FDS6875
Dual P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDS6875
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
I
D
Gate-Source Voltage
±8
V
Drain Current - Continuous
(Note 1a)
-6
A
- Pulsed
-20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS6875 Rev.C
-6 A, -20 V. R
DS(ON)
= 0.030
@ V
GS
= -4.5 V,
R
DS(ON)
= 0.040
@ V
GS
= -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored to
minimize the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging and protection circuits.
S1
D1
S2
G1
SO-8
D2
FDS
6875
D2
D1
G2
pin
1
1
5
7
8
2
3
4
6
1998 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6890A | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDS6892AZ | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6894 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6875 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8 |
| FDS6890A | 功能描述:MOSFET SO-8 DUAL N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6890A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6892 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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