參數(shù)資料
型號: FDS6814
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET
中文描述: 8 A, 20 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SOIC-8
文件頁數(shù): 1/6頁
文件大?。?/td> 230K
代理商: FDS6814
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
20
±
12
8
50
2.0
1.6
1.0
0.9
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
P
D
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
78
40
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDS6814
FDS6814
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
1
5
7
8
2
3
4
6
D1
SO-8
D2
D2
D1
S1
S2
G1
G2
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相關(guān)PDF資料
PDF描述
FDS6815 Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6815 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDS6875 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6875 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8
FDS6890A 功能描述:MOSFET SO-8 DUAL N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6890A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8