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參數(shù)資料
| 型號： | FDS6681Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 20000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | FDS6681Z |
FDS6681Z Rev B (W)
Typical Characteristics
0
15
30
45
60
75
90
105
0
0.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
1.5
2
-
D
,
-6.0V
-3.5V
V
GS
= -10V
-4.0V
-3.0V
-4.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
15
30
45
60
75
90
105
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -3.5V
-4.5V
-4.0V
-8.0V
-10V
-5.0V
-6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-30
-10
10
30
50
70
90
110
130
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -20A
V
GS
= -10V
0.002
0.004
0.006
0.008
0.01
0.012
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -10A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
15
30
45
60
75
90
105
1
1.25
1.75
2
2.25
-V
GS
, GATE1.5
-
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
0.001
0.01
0.1
1
10
100
1000
0
0.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6681Z | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6681Z_G | 制造商:Fairchild 功能描述:30V P-Channel PowerTrench? MOSFET |
| FDS6681Z-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6681Z Series P-Channel 30 V 4.6 mOhm PowerTrench Mosfet - SOIC-8 |
| FDS6682 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6682_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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