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參數(shù)資料
| 型號： | FDS6681Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 20000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | FDS6681Z |
FDS6681Z Rev B (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
RR
Reverse Recovery Time
Q
RR
Reverse Recovery Charge
–2.1
A
V
SD
V
GS
= 0 V,
I
S
= –2.1 A
(Note 2)
–0.7
–1.2
V
I
F
= –20 A,
dI
F
/dt = 100 A/μs
125
94
ns
nC
(Note 2)
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in
pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6681Z | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6681Z_G | 制造商:Fairchild 功能描述:30V P-Channel PowerTrench? MOSFET |
| FDS6681Z-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6681Z Series P-Channel 30 V 4.6 mOhm PowerTrench Mosfet - SOIC-8 |
| FDS6682 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6682_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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