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參數(shù)資料
| 型號： | FDS6681Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 20000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | FDS6681Z |
June 2005
2005 Fairchild Semiconductor Corporation
FDS6681Z Rev B (W)
FDS6681Z
30 Volt P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
–20 A, –30 V.
Extended V
GSS
range (–25V) for battery applications
HBM ESD protection level of 8kV typical (note 3)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
R
DS(ON)
= 4.6 m
@ V
GS
= –10 V
R
DS(ON)
= 6.5 m
@ V
GS
= –4.5 V
S
D
S
S
SO-8
D
D
D
G
4
5
3
6
2
7
1
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
Drain Current – Continuous
I
D
– Pulsed
P
D
Power Dissipation for Single Operation
Ratings
–30
±25
–20
–105
2.5
1.2
1.0
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Device Marking
FDS6681Z
Device
FDS6681Z
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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| FDS6688S | 30V N-Channel PowerTrench SyncFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6681Z | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6681Z_G | 制造商:Fairchild 功能描述:30V P-Channel PowerTrench? MOSFET |
| FDS6681Z-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6681Z Series P-Channel 30 V 4.6 mOhm PowerTrench Mosfet - SOIC-8 |
| FDS6682 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6682_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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