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參數(shù)資料
| 型號： | FDS6681Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 20000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | FDS6681Z |
FDS6681Z Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= –250
μ
A
–30
V
I
D
= –250
μ
A, Referenced to 25
°
C
–26
mV/
°
C
V
DS
= –24 V, V
GS
= 0 V
V
GS
= ±25 V, V
DS
= 0 V
–1
±10
μ
A
μ
A
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –10 V, I
D
= –20 A
V
GS
= –4.5 V, I
D
= –17 A
V
GS
= –10 V, I
D
= –20 A,T
J
=125
°
C
V
DS
= –5 V, I
D
= –20 A
–1
–1.8
–3
V
6
mV/
°
C
3.8
5.2
5.0
79
4.6
6.5
6.3
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
7540
1400
1120
pF
pF
pF
V
DS
= –15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g(TOT)
Total Gate Charge at V
GS
= –10V
Q
g(TOT)
Total Gate Charge at V
GS
= –5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
20
9
660
380
185
105
26
47
35
18
1060
610
260
150
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= –15 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6
V
DS
= –15 V, I
D
= –20 A
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6681Z | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6681Z_G | 制造商:Fairchild 功能描述:30V P-Channel PowerTrench? MOSFET |
| FDS6681Z-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6681Z Series P-Channel 30 V 4.6 mOhm PowerTrench Mosfet - SOIC-8 |
| FDS6682 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6682_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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