參數(shù)資料
型號： FDMS8690_07
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз
中文描述： N溝道功率MOSFET的30V的海溝㈢，第27A條，9.0mз
文件頁數(shù)： 4/7頁
文件大小： 275K
代理商： FDMS8690_07
F
M
FDMS8690 Rev.C2
www.fairchildsemi.com
4
Figure 7.
0
5
10
15
20
0
2
4
6
8
10
I
D
= 14A
V
DD
= 15V
V
DD
= 20V
V
DD
= 10V
V
G
,
Q
g
,GATE CHARGE (nC)
Gate Charge Characteristics
Figure 8.
0.1
1
10
10
100
1000
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
4000
Capacitance vs Drain
to Source Voltage
Figure 9.
1E-3
0.01
0.1
1
10
100
1
10
T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE(ms)
Unclamped Inductive
Switching Capability
T
J
= 100
o
C
T
J
= 125
o
C
50
300
Figure 10.
Current vs Ambient Temperature
25
50
75
100
125
150
0
3
6
9
12
15
R
θ
JA
= 50
o
C/W
I
D
,
T
A
, AMBIENT TEMPERATURE
(
o
C
)
Maximum Continuous Drain
V
GS
= 4.5V
V
GS
= 10V
Figure 11. Forward Bias Safe
Operating Area
0.1
1
10
100
0.01
0.1
1
10
100
100us
DC
1s
100ms
10ms
1ms
SINGLE PULSE
T
J
=
MAX RATED
T
A
=
25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
I
D
,
V
DS
, DRAIN-SOURCE VOLTAGE (V)
200
Figure 12.
10
-4
10
-3
10
t, PULSE WIDTH (s)
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
0.5
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
2000
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
----------------------
T
A
–
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMS8692 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8820 功能描述:MOSFET NCh 30V 116A 2.4mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8848NZ 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8860AS 制造商:Fairchild Semiconductor Corporation 功能描述:
FDMS8880 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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