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參數(shù)資料
| 型號： | FDMW2512NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 7200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2 X 5 MM, 0.80 MM HEIGHT, MicroFET, MLP-6 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | FDMW2512NZ |
October 2005
FDMW2512NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
2005 Fairchild Semiconductor Corporation
FDMW2512NZ Rev D
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
@ V
= 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
Li-Ion Battery Pack
Features
7.2 A, 20 V
R
DS(ON)
= 26 m
@ V
GS
= 4.5 V
R
DS(ON)
= 34 m
@ V
GS
= 2.5 V
ESD protection Diode(note 3)
Low Profile – 0.8 mm maximum – in the new
package MicroFET 2 x 5 mm
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
7.2
28
2.2
0.8
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
55
145
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2512Z
FDMW2512NZ
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
PIN 1
G2
S2
S2
G1
S1
S1
S1 S1 G1
S2 S2 G2
MLP 2x5
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