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參數(shù)資料
| 型號： | FDMS8690 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 27 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 468K |
| 代理商： | FDMS8690 |
FDMS8690
N-Channel PowerTrench
MOSFET
30V, 19.8A, 9m
March 2006
2006 Fairchild Semiconductor Corporation
FDMS8690 Rev B(W)
www.fairchildsemi.com
General Description
This device has been designed specifically to improve
the efficiency of DC-DC converters. Using new
techniques in MOSFET construction, the various
components of gate charge and capacitance have been
optimized to reduce switching losses. Low gate
resistance and very low Miller charge enable excellent
performance with both adaptive and fixed dead time
gate drive circuits. Very low r
has been maintained
to provide an extremely versatile device.
Applications
High Efficiency DC-DC Converters
Notebook Vcore Power Supply
Multi purpose Point of Load
Features
Max r
DS(on)
= 9.0m
at V
GS
= 10V, I
D
= 19.8A
Max r
DS(on)
= 12.5m
at V
GS
= 4.5V, I
D
= 11.5A
High performance trench technology for extremely
low r
DS(on)
and gate charge
Minimal Qgd (2.9 nC typical)
RoHS Compliant
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
30
±
20
19.8
90
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
2.8
1.1
T
J
, T
STG
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDMS8690
FDMS8690
Operating and Storage Junction Temperature Range
–55 to +150
°
C
(Note 1a)
44
115
°
C/W
(Note 1b)
Reel Size
7’’
Tape width
12mm
Quantity
3000 units
4
3
2
1
5
6
7
8
F
M
S S S G
D D D D
PIN 1
MLP 5X6
D
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS8690_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз |
| FDMS8692 | 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8820 | 功能描述:MOSFET NCh 30V 116A 2.4mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8848NZ | 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8860AS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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