參數(shù)資料
型號(hào)： FDMS8690_07
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз
中文描述： N溝道功率MOSFET的30V的海溝㈢，第27A條，9.0mз
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 275K
代理商： FDMS8690_07
F
M
FDMS8690 Rev.C2
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
100
V
GS
=
4.5V
V
GS
= 3.5V
V
GS
= 3V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
10V
I
D
,
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
20
40
60
80
100
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
GS
= 3.5V
V
GS
= 3V
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 10V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
PULSE DURATION = 80
μ
S
DUTY CYCLE = 0.5% MAX
I
D
= 14A
V
GS
= 10V
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
2
4
6
8
10
4
8
12
16
20
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 14A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
20
40
60
80
100
T
J
=-55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
200
Source to Drain Diode
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